Quiz Questions - ITI Quiz - 07-May-2026 10:50 AM

Question 1 1 Marks

What is the common and popular application of U.J.T?

A

Multivibrator

B

Voltage regulator

C

Relaxation oscillator

D

Motor speed controller

Question 2 1 Marks

How gate is biased in JFET?

A

AC supply function

B

Forward biased

C

Reverse biased

D

Dual supply function

Question 3 1 Marks

Which is the N - channel FET?

A

AC supply connected to drain termin

B

Main current flows through N-doped material

C

Main current flows through P-doped material

D

S-terminal connected to positive

Question 4 1 Marks

Which is the package type for the JFET BFW10?

A

TO-62

B

TO-72

C

TO-82

D

TO-92

Question 5 1 Marks

What is the term stands for TRIAC?

A

Triode Alternate control

B

Triode DC semiconductor

C

Triode AC semiconductor

D

Triode Access console

Question 6 1 Marks

What is the code number of TRIAC?

A

2N2646

B

BFW10

C

BT136

D

2N1597

Question 7 1 Marks

What is the switching speed of solid state relays?

A

1 to 25 nano seconds

B

10 to 60 nano seconds

C

1 to 100 nano seconds

D

1 to 100 milli seconds

Question 8 1 Marks

What is the full form of the abbreviation MOSFET?

A

Minimum output signal FET

B

Medium oscillator signal FET

C

Metal oxide semiconductor FET

D

Metal orgamic serial FET

Question 9 1 Marks

What is the input impedance of IGBT?

A

Low input impedance

B

High input impedance

C

Medium input impedance

D

Infinity input impedence

Question 10 1 Marks

What is the advantage of MOSFET?

A

Superior current conduction capability

B

Low gate signal power requirements

C

Very low on-state voltage

D

Low driving power

Question 11 1 Marks

What is the advantage of IGBT?

A

Low driving power

B

Low gate signal power

C

Fast switching speed

D

Used to isolate logic circuits

Question 12 1 Marks

Which is the property of IGBT?

A

Low input impedance

B

High efficiency and fast switching

C

Low gate signal

D

Significant power consumption

Question 13 1 Marks

How many alternating layers are there in IGBT?

A

2 layers

B

3 layers

C

4 layers

D

Single layer

Question 14 1 Marks

Which electrical quantity controls the operation of the bipolar transistor device?

A

Energy

B

Current

C

Voltage

D

Frequency

Question 15 1 Marks

How the drive circuits for the power MOSFETs are coupled?

A

Direct coupling method

B

Using logic circuitry

C

Using pulse transformer

D

Using transistors

Question 16 1 Marks

When does the complementary metal oxide type MOSFET configuration consumes power?

A

While it holds its state

B

Always consumes power

C

Never consumes power

D

During switching

Question 17 1 Marks

Why the electronic device IGBT is preferred over the power MOSFET?

A

Low switching speed

B

Higher driving power requirement

C

Higher switching repetition rates

D

Suitability for medium power applications

Question 18 1 Marks

Which circuit uses the enhancement type MOSFET?

A

High frequency switching circuits

B

High power amplifier circuits

C

Low power oscillator circuits

D

Integrated MOS switching circuits

Question 19 1 Marks

What is the drawback of IGBT compared to the power MOSFET?

A

Poor switching speed

B

Poor current conduction capability

C

Higher driving power requirement

D

Not suitable for power applications

Question 20 1 Marks

Which insulation layer is used in MOSFET?

A

Silicon-di-oxide

B

Arsenic material

C

Antimony material

D

Germanium material

Question 21 1 Marks

What is the main advantages of IGBT over BJT?

A

Fast switching speed

B

Superior current conduction capability

C

Reverse bias secondary break downs

D

Thermal limits are pushed to the edge

Question 22 1 Marks

6 What is the input impedance of IGBT?

A

Low

B

High

C

Unity

D

Infinity

Question 23 1 Marks

What is the advantage of IGBT?

A

It has low input impedance

B

Low efficiency and slow switching

C

High efficiency and fast switching

D

IGBT is a gate current driven device

Question 24 1 Marks

What is the advantage of MOSFET?

A

Fast switching speed

B

Slow switching speed

C

Higher power gate signal

D

Low thermal ionisation of electron-holes

Question 25 1 Marks

What is the maximum blocking voltage of very high current handling IGBT modules?

A

440 V

B

1000 V

C

5000 V

D

6000 V

Question 26 1 Marks

What is the minimum current ratings of solid state relays available in low power packages?

A

Few micro Amperes

B

10 milli Ampere

C

50 milli Ampere

D

100 milli Ampere

Question 27 1 Marks

Which current flows in TRIAC between MT1 and MT2?

A

Conventional current

B

Principal current

C

Reverse current

D

Leakage current

Question 28 1 Marks

What is the maximum specified voltage for the TRIAC TIC 201D?

A

1.5 V

B

1.7 V

C

2.1 V

D

2.5 V

Question 29 1 Marks

What is the maximum drain- source voltage, VDS for the JFET BF 245B?

A

10 V

B

20 V

C

30 V

D

40 V

Question 30 1 Marks

Which device is a unipolar transistor?

A

UJT

B

FET

C

BJT

D

IGBT

Question 31 1 Marks

What is the gate current (Ig) of the JFET, when reverse biased?

A

Practically very low

B

Practically zero

C

Practically unity

D

Practically infinity